HY62SF16101CSLF-I

HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information Change AC Characteristic - tBLZ Draft Date Dec.16. 2000 Remark Final 04 Mar.24. 2002 Final This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.04 /Mar. 02 Hynix Semiconductor HY62SF16101C Series DESCRIPTION The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(LL/SL-part) -. 1.2V(min) data retention Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62SF16101C 1.7~2.3 85/100/120 HY62SF16101C-I 1.7~2.3 85/100/120 Note 1. Blank : Commercial, I : Industrial 2. Current value is max. Operation Current/Icc(mA) 3 3 Standby Current(uA) LL...