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HY62LF16406D Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.3 ~ 2.7V Super Low Pow...
www.DataSheet4U.com
HY62LF16406D Series
256Kx16bit full
CMOS SRAM
Document Title
256K x16 bit 2.3 ~ 2.7V Super Low Power F
CMOS Slow SRAM
Revision History
Revision No 00 01 02 History Initial Draft Changed Logo Changed Isb1 values Changed part No Q -> L Changed Package Size (6.1mm -> 6.0mm) Draft Date Dec.20.2000 Mar.23.2001 Jun.07.2001 Remark Preliminary Preliminary Preliminary
03
Aug.07.2001
Preliminary
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.03 / Aug.01 Hynix Semiconductor
HY62LF16406D Series
Preliminary DESCRIPTION
The HY62LF16406D is a high speed, super low power and 4Mbit full
CMOS SRAM organized as 256K words by 16bits. The HY62LF16406D uses high performance full
CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply
voltage of 1.5V.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.5V(min) data retention Standard pin configuration -. 48-ball FBGA
Product No.
Voltage (V)
Speed (ns)
Operation Current/Icc(mA) 3
HY62LF16406C-I 2.3~2.7 70/85 Note 1. Blank : Commercial, I : Industrial 2. Current value is max.
Standby ...