HY62LF16206A-LT12C
128Kx16bit full CMOS SRAM
Document Title
128K x16 bit 2.5 V Low Power Full CMOS slow SRAM
Revision ...
HY62LF16206A-LT12C
128Kx16bit full
CMOS SRAM
Document Title
128K x16 bit 2.5 V Low Power Full
CMOS slow SRAM
Revision History
Revision No 00 01 02 03 04 05 History Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration DNU -> NC Part Number Revision Power Supply 2.5V : Q -> L Add another PKG Size 48-TSOP1(12mm x 14mm) Draft Date Apr.07.2001 Apr.25.2001 May.08.2001 May.10.2001 May. 15.2001 Apr. 16.2002 Remark Preliminary
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.05 /Apr. 2002 Hynix Semiconductor
HY62LF16206A-LT12C
DESCRIPTION
The HY62LF16206A is a high speed, super low power and 2Mbit full
CMOS SRAM organized as 128K words by 16bits. The HY62LF16206A uses high performance full
CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply
voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(L-part) -. 1.2V(min) data retention Standard pin configuration -. 48-TSOP1(12mm X 14mm, 12mm X 18mm)
Product
Voltage No. (V) HY62LF16206A 2.3~2.7 Notes : 1. Current value is max.
Speed (ns) 120
Operation Curre...