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HY62LF16206A

Hynix Semiconductor

128Kx16bit full CMOS SRAM

HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision ...


Hynix Semiconductor

HY62LF16206A

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Description
HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No 00 01 02 03 04 05 History Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration DNU -> NC Part Number Revision Power Supply 2.5V : Q -> L Add another PKG Size 48-TSOP1(12mm x 14mm) Draft Date Apr.07.2001 Apr.25.2001 May.08.2001 May.10.2001 May. 15.2001 Apr. 16.2002 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.05 /Apr. 2002 Hynix Semiconductor HY62LF16206A-LT12C DESCRIPTION The HY62LF16206A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 128K words by 16bits. The HY62LF16206A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(L-part) -. 1.2V(min) data retention Standard pin configuration -. 48-TSOP1(12mm X 14mm, 12mm X 18mm) Product Voltage No. (V) HY62LF16206A 2.3~2.7 Notes : 1. Current value is max. Speed (ns) 120 Operation Curre...




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