HY628400A

HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 04 05 06 History Revision History Insert Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.06.2000 Aug.04.2000 Dec.04.2000 Remark Final Final Final 07 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 07 / Apr. 2001 Hynix Semiconductor HY628400A Series DESCRIPTION The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V. Product Voltage Speed No. (V) (ns) HY628400A 4.5~5.5 55/70/85 HY628400A-E 4.5~5.5 55/70/85 HY628400A-I 4.5~5.5 55/70/85 Note 1. Current value is max. Operation Current/Icc(mA) 10 10 10 FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low powe...