Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
HY62256A-(I) Series
32Kx8bit CMOS SRAM
Descrip...
Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
HY62256A-(I) Series
32Kx8bit
CMOS SRAM
Description Features The Fully static operation and HY62256A/HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs power and 32,786 x 8-bits and outputs
CMOS Static Random Low power consumption Access Memory -2.0V(min.) data fabricated using retention Hyundai's high Standard pin performance
CMOS configuration process technology. The -28 pin 600 mil PDIP HY62256A/HY62256A-I -28 pin 330 mil SOP has a data retention mode -28 pin 8x13.4 mm that guarantees data to TSOP-1 remain valid at the (standard and reversed) minimum power supply
voltage of 2.0 volt. Using the
CMOS technology, supply
voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low
voltage operation and battery back-up application.
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Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
Voltage Speed Product No. (V) (ns) HY62256A 5.0
Standby Operation Current(uA) Temperature Current(mA) (°C) L LL 1mA 100 25 0-70(Normal) 1mA 100 -40-85(E.T.)
55/70/85 50 55/70/85 50
HY62256A-I 5.0
Note 1. E T. Extended Temperature, Normal: Normal Temperature 2. Current value is max. Features | Pins | Ratings | Timing | Package | Ordering
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