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HY51V18163HGJ-6

Hynix Semiconductor

1M x 16Bit EDO DRAM


Description
HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a hi...



Hynix Semiconductor

HY51V18163HGJ-6

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