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HY3610P

HOOYI

N-Channel Enhancement Mode MOSFET


Description
HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Informa...



HOOYI

HY3610P

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