HY29LV800
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, progr...
HY29LV800
8 Mbit (1M x 8/512K x 16) Low
Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full
voltage range operation – 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values) – Automatic sleep mode current: 0.2 µA – Standby mode current: 0.2 µA – Read current: 7 mA (at 5 Mhz) – Program/erase current: 15 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 KB and fifteen 64 KB sectors in byte mode – One 8 KW, two 4 KW, one 16 KW and fifteen 32 KW sectors in word mode – Top or bottom boot block configurations available Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Sectors lockable in-system or via programming equipment – Temporary Sector Unprotect allows changes in locked sectors (requires high
voltage on RESET# pin) Fast Program and Erase Times – Sector erase time: 0.5 sec typical for each sector – Chip erase time: 10 sec typical – Byte program time: 9 µs typical – Word program time: 11 µs typical Unlock Bypass Program Command – Reduces programming time when issuing multiple program command sequences Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses
n Mi...