DatasheetsPDF.com

HY29LV800B-55 Datasheet

Part Number HY29LV800B-55
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
Datasheet HY29LV800B-55 DatasheetHY29LV800B-55 Datasheet (PDF)

HY29LV800 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values) – Automatic sleep mode current: 0.2 µA – Standby mode current: 0.2 µA – Read current: 7 mA (at 5 M.

  HY29LV800B-55   HY29LV800B-55






Part Number HY29LV800B-55I
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
Datasheet HY29LV800B-55 DatasheetHY29LV800B-55I Datasheet (PDF)

HY29LV800 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values) – Automatic sleep mode current: 0.2 µA – Standby mode current: 0.2 µA – Read current: 7 mA (at 5 M.

  HY29LV800B-55   HY29LV800B-55







8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory

HY29LV800 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values) – Automatic sleep mode current: 0.2 µA – Standby mode current: 0.2 µA – Read current: 7 mA (at 5 Mhz) – Program/erase current: 15 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 KB and fifteen 64 KB sectors in byte mode – One 8 KW, two 4 KW, one 16 KW and fifteen 32 KW sectors in word mode – Top or bottom boot block configurations available Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Sectors lockable in-system or via programming equipment – Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Fast Program and Erase Times – Sector erase time: 0.5 sec typical for each sector – Chip erase time: 10 sec typical – Byte program time: 9 µs typical – Word program time: 11 µs typical Unlock Bypass Program Command – Reduces programming time when issuing multiple program command sequences Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses n Mi.


2005-04-02 : AA618L2-00    LS508A    DK48    LA7672    27C256    2SD1801    TA8725AN    TC94A09F    TA7658P    HVM8   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)