HY29LV320BT-12

HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consumption (Typical/ Maximum Values) – Automatic sleep/standby current: 0.5/5.0 µA – Read current: 9/16 mA (@ 5 MHz) – Program/erase current: 20/30 mA Top and Bottom Boot Block Versions – Provide one 8 KW, two 4 KW, one 16 KW and sixty-three 32 KW sectors Secured Sector – An extra 128-word, factory-lockable sector available for an Electronic Serial Number and/or additional secured data Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Temporary Sector Unprotect allows changes in locked sectors Fast Program and Erase Times (typicals) – Sector erase time: 0.5 sec per sector – Chip erase time: 32 sec – Word program time: 11 µs – Accelerated program time per word: 7 µs Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses Compliant With Common Flash Memory Interface (CFI) Specification – Flash device parameters stored directly on the device – Allows software driver to identify and use a variety of current and future Flash products Minimum 100,000 Write Cycles per Sector n Compatible With JEDE...