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HY29LV160TF-70I Datasheet

Part Number HY29LV160TF-70I
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
Datasheet HY29LV160TF-70I DatasheetHY29LV160TF-70I Datasheet (PDF)

HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz) – Automatic sleep mode current: 1 µA – Standby mode current: 1 µA – Read current: 9 mA – Program/erase current: 20 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 .

  HY29LV160TF-70I   HY29LV160TF-70I






Part Number HY29LV160TF-70
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
Datasheet HY29LV160TF-70I DatasheetHY29LV160TF-70 Datasheet (PDF)

HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz) – Automatic sleep mode current: 1 µA – Standby mode current: 1 µA – Read current: 9 mA – Program/erase current: 20 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 .

  HY29LV160TF-70I   HY29LV160TF-70I







16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz) – Automatic sleep mode current: 1 µA – Standby mode current: 1 µA – Read current: 9 mA – Program/erase current: 20 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 KB and thirty-one 64 KB sectors in byte mode – One 8 KW, two 4 KW, one 16 KW and thirty-one 32 KW sectors in word mode – Top or bottom boot block configurations available Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Sectors lockable in-system or via programming equipment – Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Fast Program and Erase Times – Sector erase time: 0.25 sec typical for each sector – Chip erase time: 8 sec typical – Byte program time: 9 µs typical Unlock Bypass Program Command – Reduces programming time when issuing multiple program command sequences Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip Erase Suspend/Erase Resume – Suspends an erase operation to allow reading data from, or programming data to, a sector that is not being erased – Erase Resume can then be invoked to complete suspended erasu.


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