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HY29F080R90 Datasheet

Part Number HY29F080R90
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
Datasheet HY29F080R90 DatasheetHY29F080R90 Datasheet (PDF)

HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protect.

  HY29F080R90   HY29F080R90






8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory

HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Sixteen equal size sectors of 64K bytes each – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased n Sector Group Protection – Sectors may be locked in groups of two to prevent program or erase operations within that sector group n Temporary Sector Unprotect – Allows changes in locked sectors (requires high voltage on RESET# pin) n Internal Erase Algorithm – Automatically erases a sector, any combination of sectors, or the entire chip n Internal Programming Algorithm – Automatically programs and verifies data at a specified address n Fast Program and Erase Times – Byte programming time: 7 µs typical – Sector erase time: 1.0 sec typical – Chip erase time: 16 sec typical n Data# Polling and Toggle Status Bits – Provide software confirmation of completion of program or erase operations .


2005-04-02 : AA618L2-00    LS508A    DK48    LA7672    27C256    2SD1801    TA8725AN    TC94A09F    TA7658P    HVM8   


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