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HY29F002TT-70 Datasheet

Part Number HY29F002TT-70
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory
Datasheet HY29F002TT-70 DatasheetHY29F002TT-70 Datasheet (PDF)

HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current – 30 mA typical program/erase current – 1 µA typical CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write prot.

  HY29F002TT-70   HY29F002TT-70






2 Megabit (256K x 8)/ 5 Volt-only/ Flash Memory

HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current – 30 mA typical program/erase current – 1 µA typical CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Boot sector architecture with top boot block location – One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and three 64K byte sectors – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased GENERAL DESCRIPTION The HY29F002T is an 2 Megabit, 5 volt-only CMOS Flash memory organized as 262,144 (256K) bytes. The device is offered in industrystandard 32-pin TSOP and PLCC packages. The HY29F002T can be programmed and erased in-system with a single 5-volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a high voltage power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as fast as 55ns over the full operating voltage range of 5.0 volts ± 10% are o.


2005-04-02 : AA618L2-00    LS508A    DK48    LA7672    27C256    2SD1801    TA8725AN    TC94A09F    TA7658P    HVM8   


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