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HX2000R Datasheet

Part Number HX2000R
Manufacturers Honeywell
Logo Honeywell
Description SOI GATE ARRAYS
Datasheet HX2000R DatasheetHX2000R Datasheet (PDF)

RICMOS™ SOI GATE ARRAYS FEATURES • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates (Raw) • HX2000 Supports 5V Core Operation • HX2000r www.DataSheet4U.com Supports 3.3V Core Operation HX2000 HX2000r FAMILY • Total Dose Hardness ≥1x106 rad(SiO2) • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000* ≥1x109 rad(Si)/sec, HX2000r* Option Available for: ≥1x1011 rad.

  HX2000R   HX2000R






Part Number HX2000
Manufacturers Honeywell
Logo Honeywell
Description SOI GATE ARRAYS
Datasheet HX2000R DatasheetHX2000 Datasheet (PDF)

RICMOS™ SOI GATE ARRAYS FEATURES • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates (Raw) • HX2000 Supports 5V Core Operation • HX2000r www.DataSheet4U.com Supports 3.3V Core Operation HX2000 HX2000r FAMILY • Total Dose Hardness ≥1x106 rad(SiO2) • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000* ≥1x109 rad(Si)/sec, HX2000r* Option Available for: ≥1x1011 rad.

  HX2000R   HX2000R







SOI GATE ARRAYS

RICMOS™ SOI GATE ARRAYS FEATURES • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates (Raw) • HX2000 Supports 5V Core Operation • HX2000r www.DataSheet4U.com Supports 3.3V Core Operation HX2000 HX2000r FAMILY • Total Dose Hardness ≥1x106 rad(SiO2) • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000* ≥1x109 rad(Si)/sec, HX2000r* Option Available for: ≥1x1011 rad(Si)/sec, HX2000* ≥1x1010 rad(Si)/sec, HX2000r* • Dose Rate Survivability ≥1x1012 rad(Si)/sec* • Soft Error Rate ≤1x10-11 Errors/Bit/Day, HX2000 ≤1x10-10 Errors/Bit/Day, HX2000r • Neutron Fluence Hardness to 1x1014/cm2 • HX2000r Supports Mixed Voltage I/O Buffers • TTL (5V) or CMOS (5V/3.3V) Compatible I/O • Configurable Multi-Port Gate Array SRAM • Single or Dual Port Custom SRAM Drop-In Capability • Supports Chip Level Power Down for Cold Sparing • No Latchup • Supports System Speeds Beyond 100 MHz *Projected GENERAL DESCRIPTION The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process. The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates. The high density and performance characteristics of the RICMOS (Radiation Inse.


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