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HVU362

Hitachi Semiconductor

Variable Capacitance Diode VCXO

www.DataSheet4U.com ADE-208-348 (Z) HVU362 Variable Capacitance Diode VCXO Rev. 0 May. 1995 Features • High capacitanc...


Hitachi Semiconductor

HVU362

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www.DataSheet4U.com ADE-208-348 (Z) HVU362 Variable Capacitance Diode VCXO Rev. 0 May. 1995 Features High capacitance ratio.(n=3.0min) Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design. Outline Cathode mark Mark 1 2 1. Cathode 2. Anode Ordering Information Type No. HVU362 Laser Mark V2 Package Code URP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C ˚C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol Min IR1 — IR2 C1 C4 n rs — — 41.6 10.1 3.0 — 80 Typ — — — — — — — Max 10 100 49.9 14.8 — 2.0 — Unit nA pF — Ω V Test Condition VR = 10 V VR = 10 V , Ta = 60 °C VR = 1 V , f = 1 MHz VR = 4V , f = 1 MHz C1 / C4 VR = 4 V , f = 100 MHz *C=200pF,Both forward and reverse direction 1 pulse. Capacitance Capacitance ratio Series resistance ESD-Capability * Failure criterion ; IR ≥ 20nA at VR = 10 V HVU362 -9 10 80 f=1MHz -10 Reverse current I R (A) -11 Capacitance C (pF) 20 10 60 10 40 10 -12 20 -13 10 0 4 8 12 16 Reverse voltage VR (V) Fig.1 Reverse current Vs. Reverse voltage 0 10-1 1.0 Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage 10 2.0 f=100MHz 1.8 Series resistance rs (Ω ) LF = ∆ (LogC)/ ∆ (LogV R) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 Reverse voltage VR (V) Fig.3 Series resistance Vs. Reverse voltage 102 0 f=1MHz -0.50 -1.00 -1.50 -2.00 -1 10 1.0 Reverse voltage ...




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