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HVU200

Hitachi Semiconductor

Variable Capacitance Diode for Electronic Tuning

HVU200A Variable Capacitance Diode for Electronic Tuning ADE-208-067D(Z) Rev 4 Jun. 1996 Features • High capacitance ra...


Hitachi Semiconductor

HVU200

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HVU200A Variable Capacitance Diode for Electronic Tuning ADE-208-067D(Z) Rev 4 Jun. 1996 Features High capacitance ratio(n = 10min) and suitable for wide band tuner. Ultra small Resin Package (URP) is suitable for surface mount design. Low series resistance and good C-V linearity. Ordering Information Type No. HVU200A Laser Mark 2 Package Code URP Outline Cathode mark Mark 1 2 2 1. Cathode 2. Anode HVU200A Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 32 125 –55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C2 C25 Capacitance ratio Series resistance Matching error Note: 1. n rs ∆ C/C *1 Min — — 27.7 2.67 10.0 — — Typ — — — — — — — Max 10 100 31.8 3.03 — 0.70 2.0 Unit nA Test Condition VR = 30V VR = 30V, Ta = 60 °C pF VR = 2V, f = 1 MHz VR = 25V, f = 1 MHz — Ω C2/ C25 VR = 5V, f = 470 MHz VR = 2 to 25V, f = 1 MHz % C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆ C/C continuous in a reel , expect extention to another group. Calculate Matching Error, (Cmax-Cmin) ∆C/C= Cmin x 100 (%) 2 HVU200A Main Characteristic 10 2 f=1MHz 10 -7 10 -6 Reverse current I R (A) 10 10 10 10 10 Capacitance C -9 (pF) 10 1.0 10 20 30 40 50 0.5 1.0 10 Reverse voltage V R (V) Fig.2 Capacitance Vs. Reverse voltage 30 Reverse voltage VR (V) 0 0 f=470MHz -0.5 10 -8 -10 -11 -12 -13 Fig.1 Reverse ...




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