HVU187

HVU187 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator ADE-208-054D(Z) Rev 4 Nov. 1998 Features Low forward resistance. (rf=5.5 Ω max) Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. HVU187 Laser Mark D Package Code URP Outline Cathode mark Mark 1 D 2 1. Cathode 2. Anode HVU187 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — 3.5 200 Typ — — — — — Max 100 1.0 2.4 5.5 — Unit nA V pF Ω V Test Condition VR = 60V I F = 10 mA VR = 0V, f = 1 MHz I F = 10 mA, f = 100 MHz C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 100nA at VR = 60V 2 HVU187 Main Characteristic -3 10 10 -6 10-7 Reverse current I R (A) -8 10 Forward current I F (A) -5 10 10 -7 10 -9 10-10 10 -11 10 -12 10 -13 0 10 -9 10 -11 10 -13 0 0.2 0.4 0.6 0.8 1.0 20 40 60 80 100 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 4 10 f=1MHz f=100MHz Forward resistance r f (Ω ) 2 10 Capacitance C (pF) 10 3 10 2 1.0 10 10 -1 1.0 1.0 10 Reverse voltage V R (V) 10 10 -...