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HVR316

EIC discrete Semiconductors

HIGH VOLTAGE RECTIFIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 HVR312 - HVR320 PRV : 1200 - 2000 Volts Io : 3.0 Ampe...


EIC discrete Semiconductors

HVR316

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 HVR312 - HVR320 PRV : 1200 - 2000 Volts Io : 3.0 Amperes HIGH VOLTAGE RECTIFIER DIODES DO - 201AD FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams 0.208 (5.30) 0.188 (4.80) 0.050 (1.28) 0.048 (1.22) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 50°C Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 3.0 A Maximum DC Reverse Current Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Junction Temperature Range Storage Temperature Range SYMBOL HVR312 HVR314 HVR316 HVR318 HVR320 VRRM 1200 1400 1600 1800 2000 VRMS 840 980 1120 1260 1400 ...




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