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HVR160

EIC discrete Semiconductors

HIGH VOLTAGE RECTIFIER DIODES

HVR125 - HVR180 PRV : 2500 - 8000 Volts Io : 0.5 Ampere FEATURES : * * * * * High current capability High surge current ...


EIC discrete Semiconductors

HVR160

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HVR125 - HVR180 PRV : 2500 - 8000 Volts Io : 0.5 Ampere FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop HIGH VOLTAGE RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current at Rated DC Blocking Voltage Junction Temperature Range Storage Temperature Range Ta = 25°C Ta = 100°C Ta = 50°C SYMBOL VRRM VRMS VDC IF(AV) HVR 125 2500 1750 2500 HVR 130 3000 2100 3000 HVR 140 4000 2800 4000 HVR 150 5000 3500 5000 0.5 HVR 160 6000 4200 6000 HVR 170 7000 4900 7000 HVR 180 8000 5600 8000 UNIT Volts Volts Volts Amp. IFSM V...




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