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HSS4148

Renesas Technology

Silicon Diode

www.DataSheet4U.com HSS4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator REJ03G0404-0100...


Renesas Technology

HSS4148

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www.DataSheet4U.com HSS4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator REJ03G0404-0100 Rev.1.00 Sep 17, 2004 Features Low capacitance. (C = 4.0 pF max) Short reverse recovery time. (trr = 4.0 ns max) Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HSS4148 Cathode band Black Mark 1 Package Code MHD Pin Arrangement 1 1 Type No. Cathode band 2 1. Cathode 2. Anode Rev.1.00 Sep 17, 2004 page 1 of 4 HSS4148 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward surge current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VR M VR IO Value 100 75 150 450 1 175 −65 to +175 Unit V V mA mA A °C °C IFM IFSM *1 Tj Tstg 1. Forward Surge within one second duration Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Note: Symbol VF IR C trr * 1 Min — — — — Typ — — — — Max 1.0 25 4.0 4.0 Unit V nA pF ns Test Condition IF = 10 mA VR = 20 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 Ω 1. Reverse recovery time test circuit DC Supply 0.1 µF Pulse Ro = 50 Ω Generator Trigger 3 kΩ Sampling Oscilloscope Rin = 50 Ω Thermal Characteristics Item Rth(j-a) Note: 1. Reference only. Typ (300) * 1 Unit °C/W Rev.1.00 Sep 17, 2004 page 2 of 4 HSS4148 Main Characteristic 10–1 10–4 Ta = 125°C 10–5 10–2 125 °C Ta = 75°C Ta = ...




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