HRP70N06K
HRP70N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technolog...
HRP70N06K
HRP70N06K
60V N-Channel Trench
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.6 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
August 2014
BVDSS = 60 V RDS(on) typ Pȍ ID = 80 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25) - Derate above 25
60 80 56 280 ρ25 360 16 160 1.07
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300...
