HRLF85N10H
Dec 2016
HRLF85N10H
100V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level Enha...
HRLF85N10H
Dec 2016
HRLF85N10H
100V N-Channel Trench
MOSFET
Features
High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free
Application
Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools, UPS, SSR
Key Parameters
Parameter BVDSS
ID (Silicon Limited) RDS(on), typ @10V RDS(on), typ @4.5V
Value 100 82 7.1 8.4
Unit V A mΩ mΩ
Package & Internal Circuit
8DFN 5x6
D D D D
G SS S
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS PD TJ, TSTG
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current (Silicon Limited)
Drain Current (Package Limited) Pulsed Drain Current
TC= 25℃ TC = 100℃ TC= 25℃
Single Pulsed Avalanche Energy
L=1mH
Power Dissipation
TC = 25℃ TA = 25℃
Operating and Storage Temperature Range
100 ±20 82 52 60 350 80 104 2.0 -55 to...