HRLF85N10H

HRLF85N10H Dec 2016 HRLF85N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capability  Enhanced Avalanche Ruggedness  100% UIS Tested, 100% Rg Tested  Lead free, Halogen Free Application  Synchronous Rectification in SMPS  Hard Switching and High Speed Circuit  Power Tools, UPS, SSR Key Parameters Parameter BVDSS ID (Silicon Limited) RDS(on), typ @10V RDS(on), typ @4.5V Value 100 82 7.1 8.4 Unit V A mΩ mΩ Package & Internal Circuit 8DFN 5x6 D D D D G SS S Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current (Silicon Limited) Drain Current (Package Limited) Pulsed Drain Current TC= 25℃ TC = 100℃ TC= 25℃ Single Pulsed Avalanche Energy L=1mH Power Dissipation TC = 25℃ TA = 25℃ Operating and Storage Temperature Range 100 ±20 82 52 60 350 80 104 2.0 -55 to...