HRI82N10K

HRW82N10K_HRI82N10K HRW82N10K / HRI82N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 110nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 6.5 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅) Power Dissipation (TC = 25୅) - Derate above 25୅ 100 100 * 70 * 350 * ρ25 470 22 3.75 190 1.27 TJ, TSTG TL Operating and Storage Temperature Range Maxi...