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HRC0203B

Hitachi Semiconductor

Silicon Schottky Barrier Diode

HRC0203B Silicon Schottky Barrier Diode for Rectifying ADE-208-800(Z) Rev 0 June. 1999 Features • Low forward voltage d...



HRC0203B

Hitachi Semiconductor


Octopart Stock #: O-171765

Findchips Stock #: 171765-F

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Description
HRC0203B Silicon Schottky Barrier Diode for Rectifying ADE-208-800(Z) Rev 0 June. 1999 Features Low forward voltage drop and suitable for high effifiency rectifying. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HRC0203B Laser Mark S2 Package Code UFP Outline Cathode mark Mark 1 S2 2 1. Cathode 2. Anode HRC0203B Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRRM I o*1 *1 Value 30 200 Unit V mA A °C °C IFSM Tj *2 3 125 -55Å`+125 Tstg 1. See from Fig.3 to Fig.5 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Thermal resistance Note 1. Symbol VF IR Rth(j-a) Min — — — Typ — — 500 Max 0.52 10 — Unit V µA Test Condition I F = 200 mA VR = 30V ° C/W Polyimide board *1 Polyimide board 20hx15wx0.8t 1.5 3.0 0.8 1.5 Unit: mm 2 HRC0203B Main Characteristic -2 1.0 Pulse test 10 Forward current I F (A) -1 10 Pulse test 10 -3 10 -2 Reverse current I R (A) Ta=75°C 10 -4 10 -3 Ta=25°C Ta=75°C 10 -5 10 -4 Ta=25°C 10 -6 10 -5 10 -6 0 0.2 0.4 0.6 0.8 1.0 10 0 -7 10 20 30 40 50 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 0.6 0V 0.30 0.25 Reverse power dissipation Pd (W) 0A t T Tj =25°C Forward p...




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