HR2000

RICMOS™ GATE ARRAYS FEATURES Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process Array Sizes from 10K to 336K Available Gates (Raw) TTL or CMOS Compatible I/O Full Complement of Screening Flows www.DataSheet4U.com HR2000 FAMILY Total Dose Hardness ≥1x106 rad(SiO2) Dose Rate Upset Hardness ≥1x109 rad(Si)/sec Dose Rate Survivability ≥1x1012 rad (Si)/sec Soft Error Rate ≤1x10-10 Errors/Bit/Day Neutron Fluence Hardness to 1x1014/cm2 No Latchup Configurable Multi-Port Gate Array SRAM Modular Custom Drop-In SRAM Capability Supports 5V Operation Supports System Speeds Beyond 75 MHz GENERAL DESCRIPTION The HR2000 gate arrays are performance oriented seaof-transistor arrays, fabricated on Honeywell’s 0.65 µm RICMOS™ IV bulk CMOS process. The high density and performance characteristics of the RICMOS (Radiation Insensitive CMOS) process make possible device operation beyond 75 MHz over the full military temperature range, even after exposure to ionizing radiation exceeding 1x106 rad(SiO2). Flip-Flops have been designed for a Soft Error Rate (SER) of less than 1x10-10 errors/bit/day in the Adams 90% worst case environment. Each HR2000 design is founded on our proven RICMOS ASIC library of SSI and MSI logic elements, configurable RAM cells and selectable I/O pads. The gate arrays feature a global clock network capable of handling multiple clock signals with low clock skew between registers. This family is fully compatible with ...