HQN2498QF

CYStech Electronics Corp. Quadruple High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor Spec. No. : C899QF Issued Date : 2009.11.09 Revised Date : 2009.12.23 Page No. : 1/6 HQN2498QF Description High breakdown voltage. (BVCEO=400V) Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. Complementary to HQP1498QF Pb-free package Equivalent Circuit HQN2498QF Outline SOP-10 The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature HQN2498QF Preliminar Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 400 400 7 300 1.5 150 -55~+150 y Unit V V V mA W °C °C CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE R fT Cob Min. 400 400 7 50 50 0.7 Typ. 0.13 0.11 0.16 100 13 Max. 100 10 100 0.18 0.18 0.3 3.7 270 1.3 Unit V V V nA nA nA V V V V Ω k MHz pF Spec. No. : C899QF Issued Date : 2009.11.09 Revised Date : 2009.12.23 Page No. : 2/6 Test Conditions IC=50μA IC=1mA IE=50μA VCB=400V VCE=300V, REB=4kΩ VEB=6V IC=20mA, IB=1mA IC=50mA, IB=5mA IC=100mA, IB=10mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=5MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs...