Silicon N-Channel Power MOSFET HPU600R800DN
○R
General Description:
HPU600R800DN, the silicon N-channel Enhanced
VDM...
Silicon N-Channel Power
MOSFET HPU600R800DN
○R
General Description:
HPU600R800DN, the silicon N-channel Enhanced
VD
MOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features:
l Superior switching performance l Low on resistance(Rdson≤0.8Ω) l Low gate charge (Typical Data:24.5nC) l Low reverse transfer capacitances(Typical:23.1pF) l 100% Single pulse avalanche energy test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source
Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source
Voltage Single Puls...