DatasheetsPDF.com

HPL650R1K9DN

Part Number	HPL650R1K9DN
Manufacturer	HUAJING MICROELECTRONICS
Description	Silicon N-Channel Power MOSFET
Published	Mar 22, 2018
Detailed Description	Silicon N-Channel Power MOSFET HPL650R1K9DN ○R General Description： HPL650R1K9DN, the silicon N-channel Enhanced VDM...
Datasheet	HPL650R1K9DN PDF File

Overview

Silicon N-Channel Power MOSFET HPL650R1K9DN ○R General Description： HPL650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-262, which accords with the RoHS standard.
Features： l Superior switching performance l Low on resistance(Rdson≤1.
9Ω) l Low gate charge (Typical Data:13.
4nC) l Low reverse transfer capacitances(Typical:5.
6pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of ...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)