Diode
Description
HN2D01F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01F
Ultra High Speed Switching Application
Unit: mm
HN2D01F is composed of 3 independent diodes.
Low forward voltage
: VF (3) = 0.98 V (typ.)
Fast reverse recovery time : trr = 1.6 ns (typ.)
Small total capacitance : CT = 0.5 μF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic...
Toshiba Semiconductor
HN2D01F PDF File
Similar Datasheet