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HMC739LP4E Datasheet

Part Number HMC739LP4E
Manufacturers Analog Devices
Logo Analog Devices
Description MMIC VCO
Datasheet HMC739LP4E DatasheetHMC739LP4E Datasheet (PDF)

HMC739LP4 / 739LP4E v03.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 23.8 - 26.8 GHz Typical Applications The HMC739LP4(E) is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios / LMDS • VSAT Features Pout: +8 dBm Phase Noise: -93 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm² Functional Diagram 8 General Description The HMC739LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC739LP4(E) integrates a reso.

  HMC739LP4E   HMC739LP4E






Part Number HMC739LP4
Manufacturers Analog Devices
Logo Analog Devices
Description MMIC VCO
Datasheet HMC739LP4E DatasheetHMC739LP4 Datasheet (PDF)

HMC739LP4 / 739LP4E v03.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 23.8 - 26.8 GHz Typical Applications The HMC739LP4(E) is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios / LMDS • VSAT Features Pout: +8 dBm Phase Noise: -93 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm² Functional Diagram 8 General Description The HMC739LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC739LP4(E) integrates a reso.

  HMC739LP4E   HMC739LP4E







MMIC VCO

HMC739LP4 / 739LP4E v03.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 23.8 - 26.8 GHz Typical Applications The HMC739LP4(E) is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios / LMDS • VSAT Features Pout: +8 dBm Phase Noise: -93 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm² Functional Diagram 8 General Description The HMC739LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC739LP4(E) integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +8 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package VCOS with Fo/2 OUTPUT - SMT Electrical Specifications, TA = +25° C, Vcc(RF), Vcc(DIG) = +5V Frequency Range Power Output Parameter SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate Min. Fo Fo/2 RF OUT 3 RF OUT/2 -3 RF OUT/16 -7 Vtune 1 Icc (RF), Icc (DIG) 160 Typ. 23.8 - 26.8 -93 200 3 1/2 -20 3/2 -30 30 -65 4 Max. 14 5 -1 13 220 10 Units GHz dBm dBm dBm dBc/Hz V mA µA dB dBc dBc MHz pp MHz/V MHz/°C 8-1 Irrliniecgf.


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