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HMC718LP4

Analog Devices

GaAs PHEMT MMIC

Amplifiers - Low Noise - SMT 7 7-1 HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - ...


Analog Devices

HMC718LP4

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Description
Amplifiers - Low Noise - SMT 7 7-1 HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Typical Applications Features The HMC718LP4(E) is ideal for: Noise Figure: 0.9 dB Cellular/3G and LTE/WiMAX/4G Gain: 32 dB BTS & Infrastructure Output IP3: +40 dBm Repeaters and Femtocells Single Supply: +3V to +5V Access Points Test Equipment OLETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4 mm SMT Package: 16 mm2 General Description The HMC718LP4(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 600 and 1400 MHz. The amplifier has been optimized to provide 0.9 dB noise figure, 32 dB gain and +40 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC718LP4(E) shares the same package and pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA. The HMC718LP4(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. S Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms* B Parameter O Frequency Range Vdd = +3V Min. Typ. Max. Min. Typ. Max. 0.6 - 1.0 1.0 - 1.4 Vdd = +5V Min. Typ. Max. Min. Typ. Max. 0.6 - 1.0 1.0 - 1.4 Units GHz Gain 26 30.5 25 27.5 27 32 25 29 dB Gain Var...




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