HMC668LP3

Amplifiers - Low Noise - SMT 7 7-1 HMC668LP3 / 668LP3E v03.0610 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz Typical Applications Features The HMC668LP3(E) is ideal for: Noise Figure: 0.9 dB Cellular/3G and LTE/WiMAX/4G Output IP3: +33 dBm BTS & Infrastructure Gain: 16 dB Repeaters and Femtocells Failsafe Operation: Tower Mounted Amplifiers Test & Measurement Equipment OLETE Functional Diagram Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC668LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 0.7 and 1.2 GHz and provides 0.9 dB noise figure, 16 dB of gain and +33 dBm IP3 from a single supply of +5V @ 57mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. The failsafe topology enables the LNA bypass path, when no DC power is available. The HMC668LP3(E) offers improved noise figure versus the previously released HMC373LP3(E). S Electrical Specifications, TA = +25° C, Rbias = 0 Ohm Parameter LNA Mode Vdd = +3V Vdd = +5V Bypass Mode Failsafe Mode Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. B Frequency Range 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 GHz G...