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HMC636ST89

Analog Devices

GaAs pHEMT

HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Typical Applications The HMC636ST...


Analog Devices

HMC636ST89

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Description
HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Typical Applications The HMC636ST89(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem 9 Microwave Radio Functional Diagram Features Low Noise Figure: 2.2 dB High P1dB Output Power: +22 dBm High Output IP3: +40 dBm Gain: 13 dB 50 Ohm I/O’s - No External Matching Industry Standard SOT89 Package General Description The HMC636ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness. Amplifiers - Linear & Power - SMT Electrical Specifications, Vs= 5.0 V, TA = +25° C Parameter Frequency Range Min Typ. Max 0.2 - 2.0 Gain 10 13 Gain Variation Over Temperature 0.01 0.02 Input Return Loss 10 Output Return Loss 13 Reverse Isolation 22 Output Power for 1 dB Compression (P1dB) 19 22 Output Third Order Intercept (IP3) 36 39 Noise Figure 2.5 Supply Current (Icq) 155 Note: Data taken with broadband bias tee on device output. Min. Typ. Max. 2.0 - 4.0 5 10 ...




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