HMC591

HMC591 v01.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC591 is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated Output Power: +34 dBm @ 24% PAE Output IP3: +43 dBm Gain: 23 dB DC Supply: +7.0 V @ 1340 mA 50 Ohm Matched Input/Output 2.47 mm x 2.49 mm x 0.1 mm Functional Diagram General Description The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. www.DataSheet4U.com Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Supply Current (Idd) [1] Adju...