HMBT9014

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features High Total Power Dissipation (PD: 225mW) Complementary to HMBT9015 High hFE and Good Linearity SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW www.DataSheet4U.com Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................................... 50 V VCEO Collector to Emitter Voltage ........................................................................................................................ 45 V VEBO Emitter to Base Voltage ................................................................................................................................ 5 V IC Collector Current ....................