Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR
FEATURES
Charger-up time is about 1 mS faster Than of...
Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR
FEATURES
Charger-up time is about 1 mS faster Than of a germanium transistor.
Pb
Lead-free
Small saturation
voltage can bring dissipation
And flasing times.
HM879
ORDERING INFORMATION
Type No.
Marking
HM879
879
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base
Voltage
30
VCEX
Collector-Emitter
Voltage
20
VCEO
Collector-Emitter
Voltage
10
VEBO
Emitter-Base
Voltage
6
IC
PC Tj,Tstg
Collector Current –Continuous –Pluse
Collector Dissipation
Junction and Storage Temperature
3 5 1
-55 to +150
Units V V V V A W ℃
E079 Rev.A
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Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR
HM879
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakd...