RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.55 µm Low Power Process • Total Dose Hardness through 1x106 rad(SiO2) OTHER • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C)
HLX6256
• Typical Operating Power <10 ...
HLX6256 PDF File
