HLB124

UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage * High Reliability TO-220 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: HLB124L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (PULSE) Base Current (DC) Base Current (PULSE) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO www.DataSheet4U.com Ic ICP IB IBP Pc TJ TSTG RATINGS 600 400 8 2 4 1 2 35 150 -40 ~ +150 UNIT V V V A A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO *VCE (sat) 1 C-E Saturation Voltage *VCE (sat) 2 *VBE (sat) 1 B-E Saturation Voltage *VBE (sat) 2 *hFE1 DC Current Gain *hFE2 *hFE3 Gain-Bandwidth Product fT *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2% TEST CONDITIONS IC = 1mA IC = 10mA IE = 1mA VCB = 600V VEB = 9V, IC = 0 IC = 0.1A, IB = 10mA IC = 0.3A, IB = 30mA IC = 0.1A, IB = 10mA IC = 0.3A, IB = 30mA VCE = 5V, IC = 0.3A VCE = 5V, IC = 0.5A VCE = 5V, IC = 1A VCE = 10V, IC = 0.3A, f=1MHz MIN 600 4...