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HLB121 Datasheet

Part Number HLB121
Manufacturers UTC
Logo UTC
Description NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
Datasheet HLB121 DatasheetHLB121 Datasheet (PDF)

UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage * Low collector saturation voltage * Fast switching speed 1 TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Coll.

  HLB121   HLB121






Part Number HLB125HE
Manufacturers Hi-Sincerity Microelectronics
Logo Hi-Sincerity Microelectronics
Description NPN Epitaxial Planar Transistor
Datasheet HLB121 DatasheetHLB125HE Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 1/5 Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ... -50 ~ +.

  HLB121   HLB121







Part Number HLB125E
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description NPN Transistor
Datasheet HLB121 DatasheetHLB125E Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6703 Issued Date : 1992.11.25 Revised Date : 2004.11.03 Page No. : 1/5 HLB125E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125E is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. Features TO-220 Internal Schematic Diagram C • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings B E • Maximum Temperatures Storage T.

  HLB121   HLB121







Part Number HLB124E
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet HLB121 DatasheetHLB124E Datasheet (PDF)

isc Silicon NPN Power Transistor HLB124E DESCRIPTION ·High Speed Switching ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching inductive circuits, and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 .

  HLB121   HLB121







Part Number HLB124E
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description NPN Transistor
Datasheet HLB121 DatasheetHLB124E Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Page No. : 1/5 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ... -55 ~ +150 °C Junction Temperature .. +150 °C.

  HLB121   HLB121







Part Number HLB124
Manufacturers UTC
Logo UTC
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HLB121 DatasheetHLB124 Datasheet (PDF)

UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage * High Reliability TO-220 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: HLB124L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current .

  HLB121   HLB121







NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR

UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage * Low collector saturation voltage * Fast switching speed 1 TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO www.DataSheet4U.com VCEO VEBO IC ICP IB IBP PC TJ TSTG RATINGS 600 400 6 300 600 40 100 10 150 -40 ~ +150 UNIT V V V mA mA mA mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current SYMBOL TEST CONDITIONS BVCBO IC = 100µA BVCEO IC = 10mA BVEBO IE = 10µA ICBO VCB = 550V ICEO VCB = 400V IEBO VEB = 6V *VCE (sat) 1 IC = 50mA, IB = 10mA C-E Saturation Voltage *VCE (sat) 2 IC = 100mA, IB = 20mA B-E Saturation Voltage *VBE (sat) IC = 50mA, IB = 10mA *hFE1 VCE = 10V, IC = 10mA DC Current Gain *hFE2 VCE = 10V, IC = 50mA *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2% MIN 600 400 6 TYP MAX 10 10 10 400 750 1 8 10 36 UNIT.


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