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HIT667 Datasheet

Part Number HIT667
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon NPN Epitaxial
Datasheet HIT667 DatasheetHIT667 Datasheet (PDF)

www.DataSheet4U.com HIT667 Silicon NPN Epitaxial REJ03G1505-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power amplifier • Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperat.

  HIT667   HIT667






Silicon NPN Epitaxial

www.DataSheet4U.com HIT667 Silicon NPN Epitaxial REJ03G1505-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power amplifier • Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Tj Tstg Ratings 120 100 6 1.0 2.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 HIT667 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Min 120 100 6 — — 140 40 — — Typ — — — — — — — — — Max — — — 500 500 330 — 0.5 1.1 Unit V V V nA nA — — V V Test conditions IC = 100 µA, IE = 0 IC = 10 mA, RBE = ∞ IE = 100 µA, IC = 0 VCB = 120 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 150 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA Rev.2.00 Mar 05, 2007 page 2 of 4 HIT667 Main Characteristics Maximum Collector Dissipation Curve Collect.


2007-09-13 : GSP202U    GSS1120    GSS2030    GSS4224    GSS4226    GSS4228    GSS4500    GSS4501    GSS4501S    GSS4502   


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