HIT647

www.DataSheet4U.com HIT647 Silicon PNP Epitaxial REJ03G1504-0200 Rev.2.00 Mar 05, 2007 Features Low frequency power amplifier Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Tj Tstg Ratings -120 -100 -6 -1.0 -2.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 HIT647 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Min -120 -100 -6 — — 140 40 — — Typ — — — — — — — — — Max — — — -500 -500 350 — -0.5 -1.1 Unit V V V nA nA — — V V Test conditions IC = -100 µA, IE = 0 IC = -10 mA, RBE = ∞ IE = -100 µA, IC = 0 VCB = -120 V, IE = 0 VEB = -6 V, IC = 0 VCE = -2 V, IC = -150 mA VCE = -5 V, IC = -1 A IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA Rev.2.00 Mar 05, 2007 page 2 of 4 HIT647 Main Characteristics Maximum Collector ...