HGTG30N60

600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V HGTG30N60 Part HGTG30N60 VCES 600V ICn 60A VCE (sat) Typ 1.8 Die Size 6.6 x 6.6 mm2 See page 2 for ordering part numbers & supply formats Applications Features AC & DC Motor Controls Fast Switching & Low Conduction Loss General Purpose Inverters High Input Impedance Maximum Ratings Short Circuit Rated Symbol BVCES VGES IC ICM SCWT TJ, TSTG Parameter Collector to Emitter Voltage Gate to Emitter Voltage Drain Current1 Continuous (TC = 25°C) Continuous (TC = 110°C) Pulsed Collector Current Short Circuit Withstand Time3 VCE = 360V, RG = 3Ω, VGE = 10V, TC = 125°C Operation Junction & Storage Temperature Ratings 600 ±20 75 60 240 10 -55 to 150 Units V V A A A µS °C Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = 600 TJ = 25oC TJ = 125oC VGE = ±20 600 - Notes: 1. Defined by chip design, not subject to 100% production test at wafer level 2. Performance will vary based on assembly technique and substrate choice 3. Repetitive Rating: Pulse width limited by maximum junction temperature - 250 4.0 ±250 V µA mA nA Page1 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components On Characteristics, T...