HGTD7N60C3

HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features 14A, 600V at TC = +25oC 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating Low Conduction Loss Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTD7N60C3 TO-251AA G7N60C HGTD7N60C3S TO-252AA G7N60...