N-Channel MOSFET
Description
HFH18N50S
Nov 2009
HFH18N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(O...
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