HFF5N60

Shantou Huashan Electronic Devices Co.,Ltd. HFF5N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features 4.5A, 600V(See Note), RDS(on) <2.5Ω@VGS = 10 V Fast switching 100% avalanche tested Improved dv/dt capability Equivalent Type: FQPF5N60C █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220F 1 1- G 2-D 3-S Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperature ------...