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HFD5N50U Datasheet

Part Number HFD5N50U
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFD5N50U DatasheetHFD5N50U Datasheet (PDF)

HFD5N50U_HFU5N50U HFD5N50U / HFU5N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 500 V RDS(on) typ ȍ ID = 4.0 A D-PAK I-PAK 2 1 3 HFD5N50U 1 2 3 HFU5N50U 1.Gate 2. Drain 3. Source.

  HFD5N50U   HFD5N50U






Part Number HFD5N50S
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFD5N50U DatasheetHFD5N50S Datasheet (PDF)

HFD5N50S_HFU5N50S OCT 2009 HFD5N50S / HFU5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 4.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 15.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N50S 1 2 3 HFU5N50S 1.Gate 2. Drain 3. Sour.

  HFD5N50U   HFD5N50U







N-Channel MOSFET

HFD5N50U_HFU5N50U HFD5N50U / HFU5N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 500 V RDS(on) typ ȍ ID = 4.0 A D-PAK I-PAK 2 1 3 HFD5N50U 1 2 3 HFU5N50U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 4.0 2.5 16 ρ30 230 4.0 6.3 4.5 PD TJ, TSTG T.


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