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HFA25TB60S Datasheet

Part Number HFA25TB60S
Manufacturers International Rectifier
Logo International Rectifier
Description Soft Recovery Diode
Datasheet HFA25TB60S DatasheetHFA25TB60S Datasheet (PDF)

www.DataSheet4U.com Bulletin PD-20616 rev. B 11/03 HFA25TB60S HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode Base Cathode 2 VR = 600V VF(typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced.

  HFA25TB60S   HFA25TB60S






Part Number HFA25TB60
Manufacturers International Rectifier
Logo International Rectifier
Description Ultrafast/ Soft Recovery Diode
Datasheet HFA25TB60S DatasheetHFA25TB60 Datasheet (PDF)

PD -2.339 HFA25TB60 HEXFRED Features • • • • • • TM Ultrafast, Soft Recovery Diode VR = 600V VF (typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description Intern.

  HFA25TB60S   HFA25TB60S







Soft Recovery Diode

www.DataSheet4U.com Bulletin PD-20616 rev. B 11/03 HFA25TB60S HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode Base Cathode 2 VR = 600V VF(typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count 1 3 N/C Anode Description International Rectifier's HFA25TB60S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRE.


2007-01-05 : 2SB0819    2SB0873    54F190    74F190    54F191    74F191    54F192    74F192    54F193    74F193   


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