HFA24N50G
July 2015
HFA24N50G
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 24 A
FEATURES
Originati...
HFA24N50G
July 2015
HFA24N50G
500V N-Channel
MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 24 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-247
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25) - Derate above 25
500 24.0 15.2 96 ρ30 1200 24 27 270 2.16
TJ, TSTG TL
Operating and Storage Temper...