HFA11N90
March 2014
HFA11N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 11 A
FEATURES
Originati...
HFA11N90
March 2014
HFA11N90
900V N-Channel
MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 11 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
TO-247
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900 11.0 6.9 44 ρ30 960 11 12 4.0
PD
Power Dissipation (TC = 25) - Derate above 25
120 0....
