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HFA08TB120S Datasheet

Part Number HFA08TB120S
Manufacturers International Rectifier
Logo International Rectifier
Description Soft Recovery Diode
Datasheet HFA08TB120S DatasheetHFA08TB120S Datasheet (PDF)

Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Features • • • • • • TM Ultrafast, Soft Recovery Diode (K) BASE + 2 Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count (N/C) 1 3 _ (A) VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM (.

  HFA08TB120S   HFA08TB120S






Part Number HFA08TB120SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Soft Recovery Diode
Datasheet HFA08TB120S DatasheetHFA08TB120SPBF Datasheet (PDF)

PD-96034 HFA08TB120SPbF HEXFRED • • • • • • TM Ultrafast, Soft Recovery Diode Base Cathode 2 Features • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free N/C VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM(typ.) = 4.5A 3 1 Anode trr(typ.) = 28ns di(rec)M/dt (t.

  HFA08TB120S   HFA08TB120S







Part Number HFA08TB120PBF
Manufacturers International Rectifier
Logo International Rectifier
Description SOFT RECOVERY DIODE
Datasheet HFA08TB120S DatasheetHFA08TB120PBF Datasheet (PDF)

PD-95736 HFA08TB120PbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free BASE CATHODE VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A 3 ANODE 2 4 2 1 CATHODE trr (typ.) = 28ns di(rec) M /dt (typ.)* = 85A /µs Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced S.

  HFA08TB120S   HFA08TB120S







Part Number HFA08TB120
Manufacturers International Rectifier
Logo International Rectifier
Description Ultrafast/ Soft Recovery Diode
Datasheet HFA08TB120S DatasheetHFA08TB120 Datasheet (PDF)

Bulletin PD -2.383 rev. C 11/00 HFA08TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4 VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC 2 1 CATHODE 3 ANODE 2 IRRM (typ.) = 4.5A trr (typ.) = 28ns di(rec) M /dt (typ.)* = 85A /µs Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Re.

  HFA08TB120S   HFA08TB120S







Soft Recovery Diode

Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Features • • • • • • TM Ultrafast, Soft Recovery Diode (K) BASE + 2 Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count (N/C) 1 3 _ (A) VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A trr(typ.) = 28ns di(rec)M/dt (typ.)* = 85A/µs Description www.DataSheet4U.com International Rectifier's HFA08TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM ) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce s.


2007-06-29 : PD58    PD5x    NC38    NC26    NC15    XTAL011400    8011    8012    W215    W2152   


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